page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com the big deal product overview mini-circuits PSA4-5043-D+ is a e-phemt based ultra-low noise mmic amplifer die operating from 50 mhz to 4 ghz with a unique combination of low noise and high ip3 making this amplifer ideal for sensitive high dynamic range receiver applications. this design operates on +3 to +5v supply at only 33 ma at 3v and 56ma at +5v, is internally matched to 50 ohms. key features 50 ? 0.05 to 4 ghz feature advantages ultra low noise: 0.8 db at 1 ghz 1.0 db at 2 ghz outstanding noise figure, measured in a 50 ohm environment without any external matching high ip3, 34 dbm at 1.0 ghz combining low noise and high ip3 makes this mmic amplifer ideal for low noise receiver front end (rfe) because it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone spur-free dynamic range high output power, +20 dbm at 2 ghz the PSA4-5043-D+ provides up to +20dbm output power at 1db compression enabling this ampli - fer to support high linear dynamic range requirements.- broad band, up to 4 ghz operating over a broadband from 50 mhz to 4 ghz, the PSA4-5043-D+ covers the primary wire - less communications bands: cellular, pcs, lte, wimax internally matched no external matching elements required to achieve the advertised noise and output power over the full band high reliability low, small signal operating current of 53ma nominal maintains junction temperatures typically below 107c at 85c at bottom of die class 1b esd (500v, hbm) the PSA4-5043-D+ is a super low noise phemt based design. unlike many other phemt designs. mini-circuits incorporates esd protection on die to achieve industry leading esd perfor - mance for a low noise amplifer. ? ultra low noise figure, 0.75 db ? high ip3 and pout at low dc power consumption ? class 1b hbm esd rating (500v) PSA4-5043-D+ low noise, high ip3 monolithic amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com product features ? ultra low noise figure, 0.8 db typ. at 1 ghz ? class 1b esd rating (500v) ? high ip3, up to 34 dbm typ. at 1 ghz ? output power at 1db comp., up to +20 dbm typ. at 2 ghz ? gain, 18.4 db typ. at 1ghz ? supply voltage, +3v, id=33ma, +5v, id=56ma ? aqueous washable typical applications ? cellular ? ism ? gsm ? wcdma ? lte ? wimax ? wlan ? gps rev. or m152391 PSA4-5043-D+ rs/th/cp 150814 pad description (see application circuit, fig. 2) rf in rf input pin (connect to rf-in via dc blocking cap) rf-out & dc-in rf output pin (connected to rf-out via blocking cap c2 and supply voltage vd via rf choke l1) gnd connections to ground: use via holes as shown in suggested layout for pcb design to reduce ground path inductance for best performance. * enhancement mode pseudomorphic high electron mobility transistor. general description PSA4-5043-D+ is an advanced wide band, high dynamic range, low noise, high ip3, high output power, monolithic amplifer die. manufactured using e-phemt* technology enables it to work with a single posi - tive supply voltage. rf-in rf-out and dc-in PSA4-5043-D+ ordering information: refer to last page 50 ff 0.05 to 4 ghz simplifed schematic and pad description low noise, high ip3 monolithic amplifer die +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com electrical specifcations 1 at 25c, zo=50 ?, (refer to characterization circuit, fig. 1) absolute maximum ratings 4 parameter ratings operating temperature -40c to 85c channel temperature 150c dc voltage 6v device current 76 ma power dissipation 380 mw input power (cw) 23 dbm (5 minutes max), 17dbm (continuous) vd=5.0v 1 vd=3.0v 1 parameter condition (ghz) min. typ. max. min. typ. max. units frequency range 0.05 4.0 0.05 4.0 ghz at dc volts (vd) 5.0 3.0 v dc current (id) 40 58 66 33 ma noise figure 0.05 0.64 0.57 db 0.5 0.75 0.75 1.0 0.82 0.83 2.0 1.0 1.0 3.0 1.3 1.27 4.0 1.6 1.55 gain 0.05 25.2 24.0 db 0.5 22.0 21.0 1.0 18.4 17.6 2.0 13.3 12.7 3.0 10.1 9.5 4.0 7.8 7.3 input return loss 0.05 7.4 6.5 db 0.5 10.8 9.5 1.0 11.5 10.2 2.0 12.5 11.0 3.0 10.9 9.7 4.0 11.1 9.7 output return loss 0.05 12.4 11.4 db 0.5 16.2 16.8 1.0 14.2 16.5 2.0 13.6 17.3 3.0 14.5 19.3 4.0 12.6 16.6 output ip3 0.05 32.2 27.6 dbm 0.5 33.3 28.0 1.0 34.0 28.5 2.0 34.6 29.5 3.0 33.9 29.4 4.0 32.6 28.5 output power @1db compression 2 0.05 18.1 14.9 dbm 0.5 18.7 15.5 1.0 19.0 16.4 2.0 19.9 18.1 3.0 20.3 18.5 4.0 20.2 18.8 dc current variation vs. voltage 0.01 0.01 ma/mv thermal resistance 3 67 67 c/w PSA4-5043-D+ 4. permanent damage may occur if any of these limits are exceeded. these maximum ratings are not intended for continuous normal operation. measured in industry standard sot-343 package. 1. measured on mini-circuits die characterization test board. see characterization test circuit (fig. 1) 2. current increases at p1db 3. defned with reference to ground pad temperature measured in industry standard sot-343 package. monolithic mmic amplifer die
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PSA4-5043-D+ fig 1 . block diagram of test circuit used for characterization. gain, return loss, output power at 1db compression (p1 db), output ip3 (oip3) and noise figure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, +5 dbm/tone at output. characterization test circuit rf-in rf-out dut die test board vd i d 3/5v bias-tee zx85-12g-s+ i ds vs (supply voltage) blk-18+ recommended application circuit fig 2. recommended application circuit c1=1000pf c2 & l1= tcbt-14+ c3=0.1f 3 or 5v c1 l1 c3 c2 rf-in rf-out (vs) i ds i d die layout critical dimensions parameter values die thickness, m 100 die width, m 800 die length, m 725 bond pad size, m 75 x 75 fig 4. bonding pad positions bonding pad position (dimensions in m, typical) fig 3. die layout die layout critical dimension parameter values die thickness, m 100 die width, m 800 die length, m 725 bond pad size, m 75 x 75 bonding pad positions ( dimension in um ) 0 33 6 3 08 0 9 8 1 13 7 03 725 800 rf in bonding pad r f out & dc in bonding pad ground bonding pad die layout critical dimension parameter values die thickness, m 100 die width, m 800 die length, m 725 bond pad size, m 75 x 75 bonding pad positions ( dimension in um ) 0 33 6 3 08 0 9 8 1 13 7 03 725 800 rf in bonding pad r f out & dc in bonding pad ground bonding pad monolithic mmic amplifer die
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic ephempt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. recommended wire length, typical wire wire length (mm) wire loop height (mm) rf-in, rf-out & dc-in 0.50 0.15 gnd 0.60 0.15 rf reference plane - no port extension PSA4-5043-D+ assembly dia gram recommended wire length wire wire length (mm) wire loop height (mm) rf -in , rf - out & dc-in 0.50 0.15 gnd 0.75 0.20 rf in rf out & dc in ground monolithic mmic amplifer die rf reference plane rf reference plane ? no port extension material: roger 4350b 10 mil dielectric constant: 3.5 copper thickness: 0.5 oz finishing: enig 15mm 0.53mm 0. 38mm rf connector: southwest 1092-03a -5
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com esd rating** human body model (hbm): class 1b (500 to <1000v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (pass 35v) in accordance with ansi/esd stm5.2-1999; passes 35v ** measured in industry standard sot-343 pacakage. performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer PSA4-5043-Dg+ PSA4-5043-Dp+ PSA4-5043-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env-80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. additional detailed technical information additional information is available on our dash board. PSA4-5043-D+ monolithic mmic amplifer die
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